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| TIC126 SERIES SILICON CONTROLLED RECTIFIERS Copyright (c) 2000, Power Innovations Limited, UK APRIL 1971 - REVISED JUNE 2000 G G G G G 12 A Continuous On-State Current 100 A Surge-Current Glass Passivated Wafer 400 V to 800 V Off-State Voltage Max IGT of 20 mA K A G 1 2 3 TO-220 PACKAGE (TOP VIEW) Pin 2 is in electrical contact with the mounting base. MDC1ACA absolute maximum ratings over operating case temperature (unless otherwise noted) RATING TIC126D Repetitive peak off-state voltage TIC126M TIC126S TIC126N TIC126D Repetitive peak reverse voltage TIC126M TIC126S TIC126N Continuous on-state current at (or below) 70C case temperature (see Note 1) Average on-state current (180 conduction angle) at (or below) 70C case temperature (see Note 2) Surge on-state current at (or below) 25C case temperature (see Note 3) Peak positive gate current (pulse width 300 s) Peak gate power dissipation (pulse width 300 s) Average gate power dissipation (see Note 4) Operating case temperature range Storage temperature range Lead temperature 1.6 mm from case for 10 seconds IT(RMS) IT(AV) ITM IGM PGM PG(AV) TC Tstg TL VRRM VDRM SYMBOL VALUE 400 600 700 800 400 600 700 800 12 7.5 100 3 5 1 -40 to +110 -40 to +125 230 A A A A W W C C C V V UNIT NOTES: 1. These values apply for continuous dc operation with resistive load. Above 70C derate linearly to zero at 110C. 2. This value may be applied continuously under single phase 50 Hz half-sine-wave operation with resistive load. Above 70C derate linearly to zero at 110C. 3. This value applies for one 50 Hz half-sine-wave when the device is operating at (or below) the rated value of peak reverse voltage and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium. 4. This value applies for a maximum averaging time of 20 ms. PRODUCT INFORMATION 1 Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters. TIC126 SERIES SILICON CONTROLLED RECTIFIERS APRIL 1971 - REVISED JUNE 2000 electrical characteristics at 25C case temperature (unless otherwise noted) PARAMETER IDRM IRRM IGT Repetitive peak off-state current Repetitive peak reverse current Gate trigger current VD = rated VDRM VR = rated VRRM VAA = 12 V VAA = 12 V tp(g) 20 s VGT Gate trigger voltage VAA = 12 V tp(g) 20 s VAA = 12 V tp(g) 20 s VAA = 12 V IH Holding current Initiating IT = 100 mA VAA = 12 V Initiating IT = 100 mA VT dv/dt NOTE On-state voltage Critical rate of rise of off-state voltage IT = 12 A VD = rated VD (see Note 5) IG = 0 TC = 110C 400 TC = - 40C RL = 100 TC = 110C 0.2 100 mA 40 1.4 V V/s RL = 100 0.8 IG = 0 RL = 100 RL = 100 TEST CONDITIONS TC = 110C TC = 110C tp(g) 20 s TC = - 40C 8 MIN TYP MAX 2 2 20 2.5 1.5 V UNIT mA mA mA 5: This parameter must be measured using pulse techniques, tp = 300 s, duty cycle 2 %. Voltage sensing-contacts, separate from the current carrying contacts, are located within 3.2 mm from the device body. thermal characteristics PARAMETER RJC RJA Junction to case thermal resistance Junction to free air thermal resistance MIN TYP MAX 2.4 62.5 UNIT C/W C/W PRODUCT 2 INFORMATION TIC126 SERIES SILICON CONTROLLED RECTIFIERS APRIL 1971 - REVISED JUNE 2000 THERMAL INFORMATION AVERAGE ON-STATE CURRENT DERATING CURVE PA - Max Continuous Anode Power Dissipated - W 16 IT(AV) - Maximum Average On-State Current - A 14 Continuous DC 12 10 8 6 4 0 2 0 30 180 Conduction Angle 40 50 60 70 80 90 100 110 = 180 TI03AE MAX ANODE POWER LOSS vs ON-STATE CURRENT 100 TJ = 110C TI03AF 10 1 0*1 0*1 1 10 100 TC - Case Temperature - C IT - Continuous On-State Current - A Figure 1. SURGE ON-STATE CURRENT vs CYCLES OF CURRENT DURATION 100 ITM - Peak Half-Sine-Wave Current - A TI03AG Figure 2. TRANSIENT THERMAL RESISTANCE vs CYCLES OF CURRENT DURATION 10 R JC(t) - Transient Thermal Resistance - C/W TI03AH 10 1 TC 70C No Prior Device Conduction Gate Control Guaranteed 1 1 10 Consecutive 50 Hz Half-Sine-Wave Cycles 100 0.1 1 10 Consecutive 50 Hz Half-Sine-Wave Cycles 100 Figure 3. Figure 4. PRODUCT INFORMATION 3 TIC126 SERIES SILICON CONTROLLED RECTIFIERS APRIL 1971 - REVISED JUNE 2000 TYPICAL CHARACTERISTICS GATE TRIGGER CURRENT vs CASE TEMPERATURE TC03AA GATE TRIGGER VOLTAGE vs CASE TEMPERATURE 1 TC03AB VAA = 12 V IGT - Gate Trigger Current - mA VGT - Gate Trigger Voltage - V RL = 100 tp(g) 20 s 10 0*8 0*6 0*4 VAA =12 V 0*2 RL = 100 tp(g) 20 s 1 -50 -25 0 25 50 75 100 125 0 -50 -25 0 25 50 75 100 125 TC - Case Temperature - C TC - Case Temperature - C Figure 5. HOLDING CURRENT vs CASE TEMPERATURE 100 TC03AD Figure 6. PEAK ON-STATE VOLTAGE vs PEAK ON-STATE CURRENT 2*5 TC = 25 C tp = 300 s 2 Duty Cycle 2 % TC03AH VTM - Peak On-State Voltage - V 125 VAA = 12 V Initiating IT = 100 mA IH - Holding Current - mA 1*5 10 1 0*5 1 -50 -25 0 25 50 75 100 0 0*1 1 10 100 TC - Case Temperature - C ITM - Peak On-State Current - A Figure 7. Figure 8. PRODUCT 4 INFORMATION TIC126 SERIES SILICON CONTROLLED RECTIFIERS APRIL 1971 - REVISED JUNE 2000 MECHANICAL DATA TO-220 3-pin plastic flange-mount package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. TO-220 4,70 4,20 o 3,96 3,71 10,4 10,0 2,95 2,54 6,6 6,0 15,32 14,55 1,32 1,23 18,0 TYP. 6,1 5,6 0,97 0,66 1 2 3 1,47 1,07 14,1 12,7 2,74 2,34 5,28 4,68 2,90 2,40 0,64 0,41 ALL LINEAR DIMENSIONS IN MILLIMETERS NOTE A: The centre pin is in electrical contact with the mounting tab. PRODUCT INFORMATION 5 TIC126 SERIES SILICON CONTROLLED RECTIFIERS APRIL 1971 - REVISED JUNE 2000 IMPORTANT NOTICE Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the information being relied on is current. PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except as mandated by government requirements. PI accepts no liability for applications assistance, customer product design, software performance, or infringement of patents or services described herein. Nor is any license, either express or implied, granted under any patent right, copyright, design right, or other intellectual property right of PI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS. Copyright (c) 2000, Power Innovations Limited PRODUCT 6 INFORMATION |
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